Grade
| Zero MPD
| Production | Research Grade | Dummy Grade |
Diameter
| 50.8 ±0.38 mm, 76.2 ±0.38 mm, 100±0.5 mm, 150±0.25mm |
Thickness
| 4H-N
| 350 μm±25μm |
| 4H-SI | 500 μm±25μm |
Wafer Orientation
| Off axis : 4.0° toward 1120 ±0.5° for 4H-N On axis : <0001>±0.5° for 4H-SI |
|
Micropipe Density
| ≤1 cm-2 | ≤5 cm-2 | ≤15 cm-2 | ≤50 cm-2 |
| Resistivity | 4H-N
| 0.015~0.028 Ω·cm |
6H-N
| 0.02~0.1 Ω·cm |
4/6H-SI
| >1E5 Ω·cm
| (90%) >1E5 Ω·cm |
Primary Flat
| {10-10}±5.0° |
Primary Flat Length
| 15.9 mm±1.7 mm, 22.2 mm±3.2 mm, 32.5 mm±2.0 mm, 47.5 mm±2.5 mm |
Secondary Flat Length
| 8.0 mm±1.7 mm, 11.2 mm±1.5 mm, 18.0mm±2.0 mm |
Secondary Flat Orientation
| Silicon face up: 90° CW. from Prime flat ±5.0° |
Edge exclusion
| 3 mm |
TTV/Bow /Warp
| ≤15μm /≤25μm /≤40μm |
Roughness
| Polish Ra≤1 nm |
CMP Ra≤0.5 nm |
Cracks by high intensity light
| None
| None
| 1 allowed, ≤1 mm |
Hex Plates by high intensity light
| Cumulative area≤1 %
| Cumulative area≤1 %
| Cumulative area≤3 % |
Polytype Areas by high intensity light
| None
| Cumulative area≤2 %
| Cumulative area≤5% |
| Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 8 scratches to 1×wafer diameter cumulative length |
|
|
Edge chip
| None
| 3 allowed, ≤0.5 mm each
| 5 allowed, ≤1 mm each |
| Contamination by | None |
| high intensity light |
